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BYT200PIV-400
ULTRAFAST POWER RECTIFIER DIODE
MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM VF (max) FEATURES AND BENEFITS LOW CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH AVALANCHE CAPABILITY ISOLATEDPACKAGE : 2500 VDC CAPACITANCE 42pF DESCRIPTION High current power rectifier diode suited for Switched Mode Power Supply and high frequency DC to DC converters. Packaged in ISOTOP, this device is intended for use in a medium voltage high current applications such as welding equi pment and Tel ecom suppli es. ABSOLUTE MAXIMUM RATING Symbol VRRM IF(RMS) IF(AV) IFSM IFRM Tstg Tj Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Repetitive peak forward current Storage temperature range Maximum junction temperature Tc = 80C = 0.5 tp = 10 ms Sinusoidal tp 10 s 2*100 A 400 V 1.4 V
A1 A2 K1 K2
PRELIMINARY DATASHEET
2 1
1 = A1 2 = K2 3 = A3 4 = K2
4
3
ISOTOPTM
Value 400 150 100 600 800 - 40 to + 150 150
Unit V A A A A C C
ISOTOP is a trademark of STMicroelectronics
August 1998 - Ed: 2A
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BYT200PIV-400
THERMAL RESISTANCES Symbol Rth (j-c) Rth (c) Junction to case Parameter Per leg Total Coupling Value 0.55 0.33 0.1 Unit C/W
STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * VF ** Parameter Reverse leakage current Forward voltage drop Tests Conditions Tj = 25C Tj = 100C Tj = 25C Tj = 125C
Pulse test : * tp = 5 ms, duty cycle < 2 % ** tp = 380 s, duty cycle < 2%
Min.
Typ. 4
Max. 120 12 1.6 1.4
Unit A mA V
VR = VRRM IF = 100 A IF = 100 A 0.95
RECOVERY CHARACTERISTICS Symbol trr IRM S factor tfr VFP Parameter Reverse recovery time Reverse recoverycurrent Softness factor Forward recovery time Peak forward voltage Test Conditions IF=0.5A IR=1A Irr=0.25A IF=1A dI/dt= -50A/s Vr=30V dIF/dt=-200A/s VR=400V dIF/dt=-200A/s VR=400V Tj=125C IF=100A Tj=125C IF=100A 0.25 500 12 ns V Min. Typ. 55 100 40 A Max. Unit ns
IF=100A dIF/dt=500A/s Measured at 1.1 x VF max. Tj=25C
To evaluate the conduction losses use the following equation : P = 0.8 x IF(AV) + 0.00228 x IF2(RMS)
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BYT200PIV-400
PACKAGE MECHANICAL DATA ISOTOP DIMENSIONS REF. A A1 B C C2 D D1 E E1 E2 G G1 G2 F F1 P P1 S Millimeters Min. 11.80 8.90 7.8 0.75 1.95 37.80 31.50 25.15 23.85 24.80 14.90 12.60 3.50 4.10 4.60 4.00 4.00 30.10 15.10 12.80 4.30 4.30 5.00 4.30 4.40 30.30 0.587 0.496 0.138 0.161 0.181 0.157 0.157 1.185 Typ. Max. Min. 12.20 9.10 8.20 0.85 2.05 38.20 31.70 25.50 24.15 0.465 0.350 0.307 0.030 0.077 1.488 1.240 0.990 0.939 0.976 0.594 0.504 0.169 0.169 0.197 0.69 0.173 1.193 Inches Typ. Max. 0.480 0.358 0.323 0.033 0.081 1.504 1.248 1.004 0.951
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsIbility for the consequences of use of such informationnor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
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